Development of ICs for Radiation Detector Signal Read-Out, Based on Analog Semicustom Arrays

E. Atkin¹, A. Demin², A. Goldsher³, I. Ilyushchenko¹, M. Khokhlov²,
V. Maslennikov¹, V. Meshcheriakov¹, A. Silaev¹, Yu. Volkov¹

¹MEPhI, Moscow, Russia
²SRIPEA,
³RI "Pulsar"

There are considered the characteristics of ICs, which were implemented with the earlier created analog semicustom arrays (SA), particularly with the SA [1], containing high-speed n-p-n transistors with a unity gain frequency of above 6 GHz, and with the not less fast SA [2,3], containing complementary transistors. During the last year an attempt was made to improve the characteristics of the earlier popular “Farhad” SA (K1451XH3), designed over 15 years ago [4]. This small chip, containing 128 bipolar transistors, including p-n-p ones, about 200 resistors and 4 capacitors, was used in the equipment of physical experiment rather seldom, due to the low values of breakdown voltage. The new version is free from this disadvantage, as well as from some other ones. For instance, an additional layer of silicon nitride, placed under the plating layer, was introduced to enhance the SA’s radiation hardness. The characteristics of the first IC samples, implemented with the new SA, are considered. Particularly those are the characteristics of the units of a multichannel converter (high-speed multivibrators, saw-tooth voltage generators, comparators), intended to convert the signals of analog sources into a time-pulse sequence, transmitted over a communication link to a receiving and registering facility.

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